| PART |
Description |
Maker |
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| CY62148ESL-55ZAXAT CY62148ESL-55ZAXI CY62148ESL-55 |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
| CY7C1049CV33 |
4-Mbit (512 K × 8) Static RAM
|
Cypress Semiconductor
|
| CY62148EV30LL-45BVI CY62148EV30LL-45BVIT CY62148EV |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
| CY62148ELL-45ZSXA |
4-Mbit (512 K 8) Static RAM
|
Cypress
|
| UPD4265800LE-A80 UPD4264800LE-A80 UPD4265800LE-A70 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
64K x 16 Static RAM
1K x 8 Dual-Port Static RAM
1-Mbit (64K x 16) Static RAM x8快速页面模式的DRAM
|
STMicroelectronics N.V.
|
| BBS-15 BBS-1/4 BBS-2/10 BBS-1-8/10 BBS-10 BBS-1-6/ |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
72-Mbit DDR-II SRAM 2-Word Burst Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
Fuse
256K (32K x 8) Static RAM
64/256/512/1K/2K/4K x 18 Synchronous FIFOs
Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs
Neuron® Chip Network Processor
64-Kbit (8K x 8) Static RAM
72-Mbit QDR™-II SRAM 2-Word Burst Architecture 保险
|
NXP Semiconductors N.V.
|
| BB4EG BB4GK BB4KLX BB4JKX BB4DF BB4NPX |
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL® 32-Mbit (2M x 16) Static RAM
MoBL® 16-Mbit (1M x 16) Static RAM
＂SHIELDING BAG 16 X 18＂＂ Inhalt pro Packung: 10 Stk. “屏蔽袋16 X 18”，“Inhalt亲Packung0沙头角。
|
ON Semiconductor
|
| CY7C1049DV33 CY7C1049DV33-10ZSXI CY7C1049DV33-12VX |
4-Mbit (512 K x 8) Static RAM Automatic power down when deselected
|
Cypress Semiconductor
|
| CY7C1049CV33-15ZSXE CY7C1049CV33-10VXA |
4-Mbit (512 K × 8) Static RAM TTL-compatible inputs and outputs
|
Cypress Semiconductor
|
| AM41PDS3224DB35IS AM41PDS3224DB40IS AM41PDS3224DT1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）1.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
|
| CY62147DV30L-55BVXE CY62147DV30LL-45BVXI CY62147DV |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 45 ns, PDSO44
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PDSO44
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PBGA48
4-Mbit (256K x 16) Static RAM 4兆位56K × 16）静态RAM
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 70 ns, PBGA48
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
